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| ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP-- VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower Package Height (0.9mm nom) Reduced component count MLP322 FEATURES * Low Equivalent On Resistance * Extremely Low Saturation Voltage (-220mV max @1A) * hFE specified up to 3A * IC=2.5A Continuous Collector Current * 2mm x 2mm MLP APPLICATIONS * DC - DC Converters * DC - DC Modules * Power switches * Motor control ORDERING INFORMATION DEVICE ZXTD4M322TA ZXTD4M322TC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000 DEVICE MARKING * S4 ISSUE 1 - JUNE 2003 1 Underside View SEMICONDUCTORS ZXT4M322 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a) Base Current Power Dissipation at TA=25C (a) Linear Derating Factor Power Dissipation at TA=25C (b) Linear Derating Factor Power Dissipation at TA=25C (d) Linear Derating Factor Power Dissipation at TA=25C (e) Linear Derating Factor Operating & Storage Temperature Range Junction Temperature SYMBOL V CBO V CEO V EBO I CM IC IB PD PD PD PD T j :T stg Tj LIMIT -70 -70 -7.5 -3 -2.5 -1000 1.5 12 2.45 19.6 1 8 3 24 -55 to +150 150 UNIT V V V A A mA W mW/ C W mW/ C W mW/ C W mW/ C C C THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient (a) (b) (d) SYMBOL R JA R JA R JA R JA VALUE 83 51 125 42 UNIT C/W C/W C/W C/W Junction to Ambient (e) NOTES (a) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached. (b) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions measured at t 5 secs with all exposed pads attached. (c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions with minimal lead connections only. (e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. (f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and 1mm wide tracks is Rth= 300C/W giving a power rating of Ptot=420mW ISSUE 1 - JUNE 2003 SEMICONDUCTORS 2 ZXT4M322 TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2003 3 SEMICONDUCTORS ZXT4M322 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -35 -135 -140 -175 -0.94 -0.78 300 300 175 40 150 470 450 275 60 10 180 14 40 700 20 MIN. -70 -70 -7.5 TYP. -150 -125 -8.5 -25 -25 -25 -50 -200 -220 -260 -1.05 -1.00 MAX. UNIT CONDITIONS V V V nA nA nA mV mV mV mV V V I C =-100 A I C =-10mA* I E =-100 A V CB =-55V V EB =-6V V CE =-55V I C =-0.1A, I B =-10mA* I C =-0.5A, I B =-20mA* I C =-1A, I B =-100mA* I C =-1.5A, I B =-200mA* I C =-1.5A, I B =-200mA* I C =-1.5A, V CE =-5V* I C =-10mA, V CE =-5V* I C =-100mA, V CE =-5V* I C =-1A, V CE =-5V* I C =-1.5A, V CE =-5V* I C =-3A, V CE =-5V* MHz I C =-50mA, V CE =-10V f=100MHz pF ns ns V CB =-10A, f=1MHz V CC =-50V, I C =-1A I B1 =I B2 =-50mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% ISSUE 1 - JUNE 2003 SEMICONDUCTORS 4 ZXT4M322 TYPICAL CHARACTERISTICS 0.6 0.5 25C 0.6 0.5 IC/IB=10 VCE (VOLTS) 0.4 0.3 0.2 0.1 0.0 1mA IC/IB=50 IC/IB=20 IC/IB=10 IC/IB=5 VCE (VOLTS) 0.4 0.3 0.2 0.1 0.0 1mA 100C 25C -55C 10mA 100mA 1A 10A 10mA 100mA 1A 10A Collector Current Collector Current VBE(SAT) vs IC VCE(SAT) vs IC 1.6 100C VCE=5V 1.2 IC/IB=5 Typical Gain (hFE) Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A -55C 25C 1.0 VBE (VOLTS) -55C 450 0.8 25C 0.6 0.4 0.2 0.0 1mA 100C 225 10mA 100mA 1A 10A Collector Current Collector Current hFE(SAT) vs IC VBE(SAT) vs IC 1.0 10 VCE=5V -55C 25C SINGLE PULSE TEST Tamb = 25 deg C VBE (VOLTS) 0.8 0.6 IC (AMPS) 1.0 100C 0.4 0.2 0.0 1mA 0.1 D.C. 1s 100ms 10ms 1ms 100s 10mA 100mA 1A 10A 0.01 0.1 1 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC Safe Operating Area ISSUE 1 - JUNE 2003 5 SEMICONDUCTORS ZXT4M322 PACKAGE OUTLINE Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM A A1 A2 A3 b b1 D D2 D4 Millimetres Min 0.80 0.00 0.65 0.15 0.18 0.17 Max 1.00 0.05 0.75 0.25 0.28 0.30 Inches Min 0.0315 0.00 0.0255 0.0059 0.0070 0.0066 Max 0.0393 0.002 0.0295 0.0098 0.0110 0.0118 DIM e E E2 E4 L L2 r Millimetres Min Max Inches Min Max 0.65 REF 2.00 BSC 0.79 0.48 0.20 0.99 0.68 0.45 0.0255 REF 0.0787 0.031 0.0188 0.0078 0.039 0.0267 0.0177 0.125 MAX. 0.075 BSC 0 12 0.005 REF 0.0029 BSC 0 12 2.00 BSC 1.22 0.56 1.42 0.76 0.0787 BSC 0.0480 0.0220 0.0559 0.0299 (c) Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2003 SEMICONDUCTORS 6 |
Price & Availability of ZXTD4M322TC
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